The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 1978

Filed:

Jun. 03, 1976
Applicant:
Inventors:

Takeo Yamazaki, Hitachi, JP;

Yoko Wakui, Hitachi, JP;

Tetuo Kosugi, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
4272 / ; 106 54 ; 118 48 ; 118 49 ; 357 73 ; 427 79 ; 427 80 ; 427 95 ; 427 99 ; 427255 ;
Abstract

An alkyl compound of zinc is reacted with alkyl compounds or alkoxyl compounds of boron and silicon in the presence of oxygen, thereby to deposit on a substrate zinc borosilicate glass film through a chemical vapor deposition process. The outlet nozzle of a raw material supply conduit for introducing the raw material compounds into a reaction zone is opened in the direction substantially in parallel with a surface of the substrate on which the glass film is to be deposited so that raw materials may be well mixed at the reaction zone. The glass film thus produced has a uniform thickness and a homogeneous composition of the constituents over an area at least of 40 mm extending from the nozzle and is suited for use as protection films for semiconductor devices and dielectric layer for a thin film capacitor on an industrial base.


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