The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 1978
Filed:
Jun. 21, 1977
Donelli J DiMaria, Mt. Kisco, NY (US);
Donald R Young, Ossining, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A graded oxide MIM or MIS structure employs band gap grading of the insulator oxide so that holes or electrons (depending on voltage bias) can be injected into the insulator oxide under moderate electric field conditions from the contact at one interface. Electron or hole injection from the opposite interface is blocked due to the larger insulator band gap near this interface. A graded oxide metal-silicon dioxide-silicon (MGOS) semiconductor structure may be fabricated by forming several pyrolytic or CVD SiO.sub.2 layers over a relatively thick thermal SiO.sub.2 layer, with the pyrolytic SiO.sub.2 layers having sequentially increasing excess Si content. This structure may also be fabricated by controlled Si ion implantation in the thermal SiO.sub.2 layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile