The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1978
Filed:
Jun. 21, 1976
Applicant:
Inventor:
Wojciech Rosnowski, Summit, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148187 ; 148188 ; 148189 ; 148190 ; 427 85 ;
Abstract
A method of fabricating a semiconductor device having a one type conductivity portion substantially surrounded by a second type conductivity portion is disclosed. The method involves selectively diffusing different impurities having the same conductivity inducing effect. The disclosed method is particularly adaptable to forming a plurality of devices in a relatively thick semiconductor wafer.