The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1978
Filed:
May. 19, 1977
Applicant:
Inventors:
Konrad Reuschel, Vaterstetten, DT;
Norbert Schink, Munich, DT;
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DT;
Primary Examiner:
Int. Cl.
CPC ...
C01B / ; C01B / ; C01B / ; C01B / ;
U.S. Cl.
CPC ...
423348 ; 423278 ; 423290 ; 423299 ; 423D / ;
Abstract
Technical-grade silicon is purified to produce silicon having less than 1 ppm of electrically effective impurities therein, particularly boron and phosphorus, by treating molten technical silicon with a hydrogen containing gas in the presence of water so as to remove such impurities from the molten silicon.
Reuschel, Konrad. (1978). Method of producing silicon useful for semiconductor component (U.S. Patent No. 4097584). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4097584
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile