The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 1978
Filed:
Aug. 03, 1977
Applicant:
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Kadomi, JA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 28 ; 357 65 ; 357 67 ; 357 59 ; 357 71 ; 219216 ; 219543 ;
Abstract
A semiconducting silicon device includes a semiconductor silicon substrate having a diffused layer and a silicon oxide film, a multi-layered electrode provided on the silicon oxide film and in contact with the diffused layer. The multi-layered electrode comprises Ti or Mo as first layer of electrode material and Ni as a second layer.