The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1978
Filed:
Jun. 18, 1976
George C Lockwood, Dayton, OH (US);
Nicholas E Aneshansley, Centerville, OH (US);
NCR Corporation, Dayton, OH (US);
Abstract
A novel memory array is disclosed, the array utilizing a matrix of variable threshold insulated gate field effect transistor cells. The cells are comprised solely of a gate region, having nitride and oxide layers, and a source region with the output data sensed, at the source, as a change of source charge as distinguished from the prior art sensing of a change of low impedance source voltage. In operation, each cell functions as an alterable capacitor. A negative pulse applied to the gate selects the cell. Variations in stored charge at the nitride-oxide interface causes changes in the threshold voltage and effective capacitance of the cell. The source charge may then be sensed to read the stored data.