The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1978
Filed:
Nov. 26, 1976
Shunji Minami, Katano, JA;
Abstract
In an analog voltage memory device of the type wherein a gate of a MOS field-effect transistor is connected to one terminal of analog switching means and to one terminal of a nonpolarized capacitor with the other terminal grounded, whereby a DC analog input voltage may be held as a source follower voltage of MOS field-effect transistor, adverse effects on the operation due to the variation in ambient temperature are eliminated by a constant current circuit including a NPN transistor. Variation in output due to the variation in ambient temperature may be minimized independently of drain current of MOS field-effect transistor, and drifts due to variation in ambient temperature of equipment and instruments such as pollution detectors and recorders which are installed outdoors may be reduced to a minimum. This analog voltage memory device is used as peak hold memory, sample-and-hold memory, zero-point memory, etc. and can well hold signals for a long time to achieve a non-volatile memory in spite of no power supply.