The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 1978
Filed:
Nov. 04, 1976
Applicant:
Inventors:
Assignee:
Nippon Electric Co., Ltd., Tokyo, JA;
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 85 ; 427 93 ; 156628 ; 156648 ; 156662 ; 148187 ; 357 49 ; 204325 ; 204144 ; 2041415 ; 204140 ; 204147 ; 204148 ;
Abstract
A process is disclosed for forming a porous region in a semiconductor device. In the process, a region of a relatively high impurity concentration is formed at a desired region of a semiconductor body of a lower impurity concentration. The semiconductor body is dipped into an electrolyte along with an electrode. The electrode is connected to the semiconductor body, whereby the high impurity concentration region is converted into a porous region.
Tsuzuki, Naobumi. (1978). Process for forming porous semiconductor region using electrolyte (U.S. Patent No. 4092445). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4092445
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile