The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 1978
Filed:
May. 06, 1977
John Chadwick Brice, Salfords, EN;
John Mackay Robertson, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of growing monocrystalline bismuth rare earth iron garnet, either as a single crystal or as an epitaxial layer, from a solution containing composing components of the garnet together with a flux. The flux consists essentially of a mixture of Bi.sub.2 O.sub.3 and RO.sub.2, wherein R is at least one of the elements Si, Ge, Ti, Sn, Zr, Ce and Te, wherein the system Bi.sub.2 O.sub.3 --RO.sub.2 includes a eutectic composition having a eutectic temperature which is below the melting temperature of pure Bi.sub.2 O.sub.3. By using these Bi.sub.2 O.sub.3 --RO.sub.2 fluxes, the monocrystalline garnets produced have lower optical absorption coefficients at, for example 5100 A and 5600 A than similar garnets grown using lead-containing fluxes. Furthermore higher growth rates and higher growth temperatures are possible when using the Bi.sub.2 O.sub.3 --RO.sub.2 fluxes rather than lead-containing fluxes.