The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 1978
Filed:
Nov. 24, 1976
Hitachi, Ltd., , JA;
Abstract
An electron device comprising (i) a semiconductor element which includes a semiconductor region A of a first conductivity type, a semiconductor region B of a second conductivity type adjoining the region A, and a semiconductor region C of the second conductivity type adjoining the region A and isolated from the region B by the region A, and in which on a surface extending from the region B via the region A to the region C, a gate electrode is provided through an insulating film, (ii) means for holding a potential of the gate electrode so that a potential of minority carriers in a surface portion of the region A underneath the gate electrode may become lower than a potential in an inner portion of the region A, (iii) means for applying a forward bias voltage between the region A and the region B, and (iv) means for applying to the region C a potential by which a potential for the minority carriers becomes lower in the region C than in the region B. The electron device is capable of such operations as amplification, oscillation and memory under an extraordinarily low supply voltage, and is extraordinarily low in the power consumption.