The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 1978

Filed:

Oct. 29, 1976
Applicant:
Inventors:

Hiroyuki Kondo, Tokyo, JA;

Takahisa Nitta, Fuchu, JA;

Yoshiro Moriguchi, Kodaira, JA;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148187 ; 148175 ; 156648 ;
Abstract

A method of manufacturing a semiconductor device, comprises the steps of masking desired parts of a semiconductor substrate with a material which is impervious to an etchant for the substrate, exposing the substrate to the etchant to thereby etch substrate parts which lie directly beneath end parts of the etchant-impervious material and substrate parts which are not masked, applying a solution preferentially into the parts directly beneath the end parts of the etchant-impervious material among the etched substrate parts, the solution being capable of being converted into a semiconduct or oxide by a predetermined heat treatment, and heat-treating the substrate in order to oxidize the etched substrate surface parts.


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