The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 1978

Filed:

Nov. 07, 1975
Applicant:
Inventors:

Theodore J LaChapelle, Jr, Orange, CA (US);

John R Davis, Costa Mesa, CA (US);

James J Licari, Whittier, CA (US);

Assignee:

Rockwell International Corporation, El Segundo, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; H01L / ;
U.S. Cl.
CPC ...
427 90 ; 427 89 ; 427 91 ; 427 99 ; 427124 ; 427125 ; 156645 ; 156650 ; 156656 ; 156657 ; 29578 ; 29583 ; 2957 / ;
Abstract

A monometallic batch process for forming beam leads of a preferred metal such as aluminum or gold. The process is applied to a wafer of finished microelectronic devices already having metal contact pads of the same preferred metal. Where aluminum is the desired metal, high deposition rates are used to minimize aluminum oxide contamination. High yield is achieved by forming the beam leads to have an elevated cantilevered configuration, by deep scribing of the wafer and, when desired, by providing an energy absorbing cushion to reduce the effect of collisions between chip edges and beam leads.


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