The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 1978
Filed:
Dec. 27, 1976
Applicant:
Inventors:
Shigeo Kuninobu, Kyoto, JA;
Takeshi Ishihara, Neyagawa, JA;
Assignee:
Matsushita Electric Industrial Co., Ltd., Kadoma, JA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ;
Abstract
A method of making an MOS-type semiconductor device wherein the surface thereon for the conductors is flat. For this purpose, a polycrystalline silicon layer is provided and a part of the layer is selectively oxidized, so that the remaining portion of the layer acts as a lead for connecting a functional region such as a source region, a drain region etc. with the conductor layer. When said oxidization is performed, the diffusion from the polycrystalline silicon layer into the substrate occurs due to heating, so that said functional regions are formed at the same time.