The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 1978

Filed:

Jul. 02, 1976
Applicant:
Inventor:

Vincent L Rideout, Mohegan Lake, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; B01J / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 29578 ; 148-15 ; 148187 ; 156653 ; 156655 ; 156657 ; 156659 ; 156662 ; 357 23 ; 357 41 ; 357 42 ; 357 51 ; 357 59 ;
Abstract

Enhancement-mode field-effect transistors (FETs) and depletion-mode FETs are provided on the same semiconductive substrate using five basic, lithographic, pattern-delineating steps. The five lithographic masking steps delineate in order:


Find Patent Forward Citations

Rideout, Vincent. (1978). Fabrication of integrated circuits containing enhancement-mode fets and (U.S. Patent No. 4085498). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4085498

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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