The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 1978
Filed:
Oct. 15, 1976
Applicant:
Inventors:
Akihiko Yasuoka, Itami, JA;
Hiroshi Shibata, Itami, JA;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JA;
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ; 357 42 ;
Abstract
A process for preparing a complementary MOS integrated circuit by forming a shallow first source-drain region near the gate; determining simultaneously the contact holes in the source-drain regions of both of the P-channel and N-channel transistors; forming a deep second source-drain region from the contact holes using thermal diffusion; and forming the electrodes at the contact holes.