The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 1978

Filed:

Oct. 07, 1976
Applicant:
Inventors:

Carlo Misiano, Rome, IT;

Karl Heinz Diedrich, Rome, IT;

Enrico Simonetti, Rome, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
2041 / ;
Abstract

A process for manufacturing semiconductor devices, particularly monocrystalline structures by sputter etching, wherein the electric discharge is effected in a rarefied atmosphere, the components of which are Argon and Hydrogen, or Argon and H.sub.2 O, or inert gas and a gas developing Hydrogen ions.


Find Patent Forward Citations

Misiano, Carlo. (1978). Process for manufacturing semiconductor structures by sputter etching (U.S. Patent No. 4082637). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4082637

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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