The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 1978
Filed:
Sep. 07, 1976
Applicant:
Inventors:
Hiroyuki Tango, Yokohama, JA;
Tadahiro Takigawa, Yokohama, JA;
Assignee:
Tokyo Shibaura Electric Co., Ltd., Tokyo, JA;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 23 ; 357 41 ; 357 51 ; 357 68 ; 357 89 ;
Abstract
An insulated-gate field-effect transistor having improved high-speed operation characteristics and high channel controllability includes a source region having first and second diffused regions and a drain region having first and second diffused regions. The first diffused regions of both the source and drain regions are formed by diffusion of a first impurity having relatively low diffusion coefficient and the second diffused regions of both the source and drain regions are formed by diffusion of a second impurity having relatively high diffusion coefficient.