The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 1978

Filed:

Sep. 15, 1975
Applicant:
Inventors:

Katsuhiko Asada, Amagasaki, JA;

Takao Nakano, Itami, JA;

Kenji Murakami, Itami, JA;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330307 ; 307303 ; 330290 ; 330293 ;
Abstract

The disclosed linear amplifier comprises a grounded N.sup.+ semiconductor substrate on which an N layer is epitaxially grown. The N epitaxial layer includes three separate P diffusion regions. One of the outermost regions is connected to an input terminal and includes an N diffusion region to form an input, common emitter NPN transistor with the epitaxial layer while forming a feedback, common base PNP transistor with the intermediate P diffusion region and epitaxial layer. The remaining P region forms a load, common base PNP transistor with the intermediate P region and epitaxial layer and is connected to an injector terminal. The intermediate P region and N region are connected to an output terminal.


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