The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 1978
Filed:
Aug. 28, 1975
Yutaka Hayashi, Hoya, JA;
Agency of Industrial Science & Technology, Tokyo, JA;
Abstract
Disclosed is a field-effect transistor device which is capable of storing pieces of analogue information in the form of charge stored in a charge-storing means. A memory device according to this invention comprises, drain and source regions in a semi-conductor substrate, an insulating layer lying on the major surface of the substrate and an elongated resistive gate region lying on the insulating layer between the drain and source regions and having two electrodes provided on the opposite ends of the gate region. When a voltage below the critical voltage of charge injection is applied to one of the electrodes whereas a voltage above the critical voltage and representative of analogue information is applied to the other electrode, the area of charge injection in the charge-storing mechanism of the insulating layer varies with the latter 'writing' voltage, thus realizing the storage of analogue information if said area is filled with electric charge. The piece of analogue information thus stored is read in terms of source-to-drain current.