The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1978
Filed:
Nov. 16, 1976
Wilbur D Johnston, Jr, Holmdel, NJ (US);
Joseph L Shay, Marlboro, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
Electrical contact between a conducting substrate, e.g., graphite, and a polycrystalline semiconductor layer of, for example p-type indium phosphide in a semiconductor device is made through a p-type GaAs intermediary layer. The GaAs layer is deposited on the conducting substrate by conventional methods such as chemical vapor deposition. The indium phosphide layer can then be deposited on the GaAs by similar techniques. The specific resistance and blocking voltage of such an interface is typically below 2 .OMEGA.-cm.sup.2 and 50 millivolts respectively. The efficiency of a p-InP/nCdS solar cell containing the improved electrical contact is measurably increased.