The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1978
Filed:
Mar. 12, 1976
Kenzo Masuda, Tokorozawa, JA;
Hitachi, Ltd., , JA;
Abstract
A read-only memory of lateral type comprising a plurality of information memory circuits connected in parallel with one another across a first line and a second line. In each of the information memory circuits, a first insulated-gate field effect transistor of either the depletion mode or the enhancement mode, selected depending on the information to be stored, is connected in series with a second insulated-gate field effect transistor of enhancement mode. The read-only memory further comprises reading means for reading the mode of the first insulated-gate field effect transistor in each information memory circuits, so that an output signal according to the mode of the first insulated-gate field effect transistor can be read out from the memory by the reading means.