The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1978
Filed:
Aug. 13, 1976
Tadao Kaji, Tokyo, JA;
Yoshio Homma, Hachioji, JA;
Hitachi, Ltd., , JA;
Abstract
An improved method for forming an isolation region of electrical insulator between elements of a semiconductor device, comprising depositing an electrical insulator at a low temperature to cover one major surface of a semiconductor substrate and to fill a groove provided in this surface of the semiconductor substrate, coating the electrical insulator layer with another electrical insulator which is etched at a rate approximately equivalent to that of the former electrical insulator, so as to make the entire top surface of the electrical insulator layer parallel to the major surface of the substrate, and then applying physical etching using ions to remove the electrical insulator layers until the surface of the substrate is exposed, whereby to provide in the groove an isolation region having a satisfactory surface flatness.