The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 1978
Filed:
Jun. 10, 1976
Sergio Palara, San Martino di Ferrara, IT;
SGS-ATES Componenti Elettronici S.p.A., Agrate Brianza (Milan), IT;
Abstract
An integrated power amplifier, composed of a multiplicity of elemental transistors epitaxially grown on a semiconductor chip, has base, emitter and collector terminals each connected in parallel to corresponding electrodes of the several elemental transistors. Each elemental transistor comprises two active emitter zones on opposite sides of a central contact zone conductively linked therewith by restricted connecting zones within the substrate, the contact zones of these transistors carrying emitter electrodes which are connected by a metallic strip to the emitter terminal. The array of transistors is divided into several parallel rows in each of which the width of the connecting zones progressively decreases from a transistor electrically closest to the base terminal to a transistor electrically closest to the emitter terminal, resulting in a progressive increase of the individual emitter resistances of these transistors to an extent compensating the voltage drop along the metallic strip between successive emitter electrodes.