The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1978
Filed:
Dec. 24, 1975
Yukuya Tokumaru, Yokohama, JA;
Masanori Nakai, Yokohama, JA;
Tokyo Shibaura Electric Co., Ltd., Tokyo, JA;
Abstract
In the semiconductor device, a P.sup.- conductivity type semiconductor layer is formed on an N.sup.+ conductivity type semiconductor substrate by vapor phase growth technique, and a first N conductivity type region is formed in the P.sup.- conductivity type layer by diffusion to extend into the N.sup.+ conductivity type substrate and to surround a portion of the P.sup.- conductivity type semiconductor layer thereby isolating that portion from the remainder. A second conductivity type region is formed in the first region by diffusion and a third N conductivity type region is formed on the isolated region of the P.sup.- conductivity type layer. At least one metal region is bonded to the isolated region and at least one metal region is bonded to the third region to form respective metal-semiconductor contact diodes. The second region, the first region and the P.sup.- conductivity type layer constitute a lateral PNP transistor while the third region, the P.sup.- conductivity type semiconductor layer and the N.sup.+ conductivity type semiconductor substrate constitute a vertical NPN transistor.