The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1978
Filed:
Nov. 05, 1976
Fritz L Schurmeyer, Yellow Springs, OH (US);
Charles R Young, Xenia, OH (US);
Abstract
A high density, static, virtually nonvolatile, Random Access Memory (RAM) cell is disclosed in which variable threshold n-channel depletion mode Metal-Nitride-Oxide-Semiconductor (MNOS) transistors are the load devices for a pair of active, n-channel, enhancement mode, Insulated Gate Field Effect Transistors (IGFETs) in a flip-flop circuit. N-channel enhancement mode access transistors also IGFETs connect the cell to the bit line and the bit line. Information is written in, and read, in volatile form conventionally. A +25 volt, 10 msec pulse applied to the gates of the depletion mode MNOS load devices transfers the data from the volatile mode to the nonvolatile mode.