The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 1978
Filed:
May. 03, 1976
Applicant:
Inventors:
James B Compton, Los Gatos, CA (US);
Sam S Ochi, San Jose, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H03K / ;
U.S. Cl.
CPC ...
307304 ; 307251 ; 307297 ; 357 22 ; 357 43 ;
Abstract
A pair of FET's are coupled in series between the emitter and collector of a bipolar transistor and the juncture of the FET's coupled to the bipolar transistor base. The FET gates are coupled to the bipolar transistor collector. When a current is passed through the emitter-collector terminals in excess of a threshold value, a constant voltage will appear over a substantial current range. The constant voltage is related to FET Vp and can be used to compensate or track integrated circuits that contain both FET's and bipolar transistors.