The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 1978
Filed:
Jul. 15, 1976
Futaba Denshi Kogyo K. K., , JA;
Abstract
A method of producing a semiconductor device comprising the step of forming a laminated element film on a substrate made of a material easy to cleave and easy to dissolve in various solvents such as water by successively depositing materials of the laminated element film on the substrate by what is called the ionized-cluster-deposition process so that crystalline film layers oriented by the crystal axis of the substrate material may be made to grow on the substrate, separating the laminated element film from the substrate by dissolving the substrate material in a solvent, and forming the semiconductor device by furnishing the separated laminated element film with suitable electrodes, etc.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile