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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4063271 B1

PDFFull Text
Date of Patent:
Dec. 13, 1977

Filed:

Jul. 26, 1972

Fet and bipolar device and circuit process with maximum junction control

Applicant:
Inventors:

Kenneth E Bean, Richardson, TX (US);

William W Lloyd, Richardson, TX (US);

Assignee:

Texas Instruments Incorporated, Dallas, TX (US);

Attorneys:

Levine; Harold

Comfort; James T.

Honeycutt; Gary C.

Primary Examiner:

Edward J Wojciechowicz

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 49 ; 357 22 ; 357 41 ; 357 43 ; 357 52 ; 357 56 ;
Abstract

Disclosed are improved field-effect and bipolar semiconductor devices and the method of making them, wherein maximum junction control provides highly predictable device parameters. Low temperature epitaxial depositions provide tight junction thickness and resistivity control, and an orientation dependent etch forms grooves circumscribing portions of the host substrate and overlying epitaxial layers to provide dielectrically isolated single crystalline mesas utilized in forming electronic devices.

Find Patent Forward Citations

Bean, Kenneth. (1977). Fet and bipolar device and circuit process with maximum junction control (U.S. Patent No. 4063271). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4063271

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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