The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1977
Filed:
Jun. 21, 1976
Yukun Hsia, Saratoga, CA (US);
McDonnell Douglas Corporation, Long Beach, CA (US);
Abstract
A method for fabricating a variable threshold IGFET free of parasitic effects and the 'floating gate' effect. The IGFET includes an oxide layer having a portion of minimum thickness in the region thereof overlying an interstitial portion of a semiconductive substrate having a pair of spaced semiconductive diffusion regions, a portion of intermediate thickness partially overlying at least one of the pair of diffusion regions and the interstitial substrate portion, and a remaining portion of maximum thickness. The oxide layer portion of minimum thickness has a width greater than the width of an overlying electrically conductive gate electrode; the oxide layer portion of intermediate thickness has a width less than the width of the overlying electrode.