The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1977
Filed:
Feb. 20, 1976
William Eddie Armstrong, Mission Viejo, CA (US);
Western Digital Corporation, Newport Beach, CA (US);
Abstract
A diffusion self-aligned, short channel device may be fabricated by ion implantation of an n-type channel region within a p-type substrate. A p-type dopant is then implanted in and driven through a portion of the n-type channel region to form an impurity region. A diffusion self-aligned n-type channel region is then disposed in the p-type impurity region and in the n-type channel region. The method allows for the simultaneous fabrication of a channel implanted MOSFET as well as a standard MOSFET. The resulting diffusion self-aligned, short channel device is a high gain, high speed small device which can be simply combined and fabricated with channel-implanted depletion devices and low body effect devices in an integrated circuit.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile