The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1977
Filed:
Jun. 21, 1976
Richard Wayne Dixon, Bernardsville, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
Described is a technique for generating directly certain derivatives of device parameters by measuring the device response to ac modulation under conditions of constant modulation index. In particular, the technique as it applies to measuring directly idF/di and i.sup.2 d.sup.2 F/di.sup.2 for AlGaAs DH p-n junction lasers is described for two cases: where the generalized function F equals either voltage V across the laser or the light intensity output L of the laser, and i equals current through the laser. For p-n junction lasers this technique permits measurement of the series resistance R.sub.s, lasing current threshold i.sub.th and the exponential factor .beta. = q/nkT.