The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 1977
Filed:
Feb. 03, 1976
Izuhiko Nishimura, Suwa, JA;
Kabushiki Kaisha Suwa Seikosha, Tokyo, JA;
Abstract
An improved semi-conductor integrated circuit wherein the likelihood of permanent breakdown of reverse junctions in the integrated circuitry in response to unexpected high voltages applied thereto is substantially reduced. The semi-conductor integrated circuitry includes at least two field-effect transistors and defines a circuit having at least one output terminal. At least one of the field-effect transistors includes a drain output terminal, and a resistance for reducing the secondary breakdown at the drain output terminal of the reverse junction between the drain output terminal and the semi-conductor integrated circuit substrate, said resistance being disposed intermediate said drain output terminal and said circuit output terminal.