The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 1977
Filed:
Apr. 04, 1975
Applicant:
Inventor:
Takashi Yoshida, Hamamatsu, JA;
Assignee:
Nippon Gakki Seizo Kabushiki Kaisha, Hamamatsu, JA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 20 ; 357 88 ;
Abstract
A junction field effect transistor of vertical type whose gate region is formed on the drain region so as to protrude into the source region side. This gate region is formed to have a sufficiently minute dimension by relying on either the selective etching method, the selective oxidizing method, or the selective chemical vapor deposition method, whereby the area of junction can be substantially reduced, resulting in a marked decrease in junction capacitance, and a high current capability can be obtained.