The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 1977
Filed:
Jan. 28, 1977
Michael Nemiroff, Solana Beach, CA (US);
Hong Jun Yue, Bud Lake, NJ (US);
William Russell Schevey, Honesdale, PA (US);
Allied Chemical Corporation, Morris Township, NJ (US);
Abstract
A process is disclosed for fabricating narrow line-width yttrium iron garnet (YIG) disks suitable for microwave applications. The process comprises forming an epitaxial thin film of yttrium iron garnet, containing from about 0.5 to 1.5 atom percent trivalent lanthanum ions on the dodecahedral sites, on a substrate such as gadolinium gallium garnet (GGG), forming a thin layer of SiO.sub.2 on the YIG film, forming a photoresist mask layer on the SiO.sub.2 layer, removing portions of the photoresist mask layer to expose portions of the underlying SiO.sub.2 layer, removing portions of the SiO.sub.2 layer to expose portions of the underlying YIG layer and removing the exposed portions of the YIG layers to form isolated La:YIG disks supported on the GGG substrate. The substrate is then further processed, as by dicing, to provide individual La:YIG disks for fabrication into microwave devices. Linewidths of about 0.45 Oe are obtained by the process.