The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 1977
Filed:
Apr. 05, 1976
Conrad A Barile, Wappingers Falls, NY (US);
Robert M Brill, Fishkill, NY (US);
John L Forneris, Lagrangeville, NY (US);
Joseph Regh, Wappingers Falls, NY (US);
IBM Corporation, Armonk, NY (US);
Abstract
A region in an integrated circuit substrate is formed by first ion implanting impurities of a selected conductivity-determining type into a semiconductor substrate through at least one aperture in a masking electrically insulative layer, and then diffusing a conductivity-determining impurity of the same type through the same aperture into said substrate. The method has particular application when the electrically insulative layer is a composite of two layers, e.g., a top layer of silicon nitride and a bottom layer of silicon dioxide and the aperture is thus a pair of registered openings respectively through said silicon nitride and silicon dioxide layers, and the aperture through the silicon dioxide layer has greater lateral dimensions than that in the silicon nitride layer to provide an undercut beneath the silicon nitride ion implantation barrier layer.