The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 1977
Filed:
Dec. 29, 1975
Applicant:
Inventor:
Gerald D Rogers, Houston, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365104 ; 3401 / ; 357 91 ; 365178 ;
Abstract
N-channel silicon gate MOS memory cells are programmed by an ion implant step which is done prior to forming the gates or the diffused source and drain regions. The implanted devices have a threshold voltage which is about zero, so the devices cannot be turned off at usual logic levels. Either ROM or RAM arrays can be made using implant for programming.