The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 1977
Filed:
Dec. 24, 1975
Applicant:
Inventors:
Maurice Bonis, Herouville, FR;
Bernard Roger, Carpiquet, FR;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 46 ; 357 44 ; 357 55 ; 357 56 ; 307315 ;
Abstract
A monolithic semiconductor device comprising at least two complementary transistors, in which the base zone of a first transistor and the collector zone of a second transistor are provided in a first epitaxial layer, while the emitter zone of the second transistor, the emitter zone of the first transistor and the base zone of the second transistor are provided in a second epitaxial layer. A separation groove is provided between the transistors in the second epitaxial layer.