The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 1977
Filed:
Jun. 01, 1976
Katunobu Awane, Ikoma, JA;
Hironori Hattori, Suita, JA;
Tetuo Biwa, Osaka, JA;
Hiroshi Tamaki, Osaka, JA;
Sharp Kabushiki Kaisha, Osaka, JA;
Abstract
In a metal oxide semiconductor device of the diffusion-self-alignment type which comprises a semiconductor body having a conductivity of one type, a drain and a source regions having a conductivity opposite that of the semiconductor body, and a channel region of the same conductivity type as the semiconductor body and having a higher conductivity than that of the semiconductor body, said channel region being formed in such a manner to surround the source region through the use of double diffusion techniques. An active pinched resistor layer of the opposite conductivity type to that of the semiconductor body and having a lower conductivity than that of the drain and the source regions is formed on the surface of the semiconductor body to extend between the drain and the channel regions. A field plate or overlay metallization is disposed on an insulating layer adjacent the drain metallization and extends outwardly towards the gate metallization so that it overlies a part of the active pinched resistor layer near the drain contact region.