The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 1977
Filed:
Jun. 19, 1974
Richard I Spadavecchia, Hopewell Junction, NY (US);
James R Struk, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An improved random access word addressable monolithic memory having a storage cell for each binary bit of each binary word of storage capacity. The storage cells being arranged in groups. Each cell of any given group being adapted to store a binary bit corresponding to a given bit position of each word stored in said memory. Each cell of each group being connected via first and second bit lines to a sense amplifier. Each sense amplifier coupled to a reference voltage source. The magnitude of the reference voltage supplied by the reference voltage source bearing a substantially invariant mathematical relationship to first and second potentials manifested by said storage cells during a read mode. The storage cells may each be generally of the type disclosed and claimed in U.S. Pat. No. 3,423,737 entitled 'Non Destructive Read Transistor Memory Cell' granted Jan. 21, 1969 to L. R. Harper and of common assignee with the instant application.