The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1977
Filed:
Oct. 05, 1976
Masayoshi Yoshimura, Hamura, JA;
Hitachi, Ltd., , JA;
Abstract
An epitaxial silicon layer is grown on a principal surface of the (100) crystal face of a silicon single crystal having a depressed portion in the principal surface. The epitaxial silicon layer is flattened by etching, the epitaxial silicon layer being formed to a sufficient thickness so that the side surfaces of the crystal face (111) of a new depressed portion as viewed in a vertical section (the new depressed portion being formed in a surface of the epitaxial silicon layer in correspondence with the first-mentioned depressed portion) intersect at a level which is, at the lowest, the final plane of the etching. The etching is anisotropic etching with an alkali etchant, by which the epitaxial silicon layer is etched down to the final plane.