The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 1977
Filed:
Feb. 13, 1976
Applicant:
Inventors:
Assignee:
Matsushita Electronics Corporation, Kadoma, JA;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; H03K / ; G11C / ; H01L / ;
U.S. Cl.
CPC ...
307238 ; 307279 ; 307288 ; 307304 ; 357 42 ; 357 54 ; 3401 / ;
Abstract
A negative resistance device formed by series-connection of a complementary pair of insulated gate type FETs (field effect transistors), the source of the FETs being connected to each other and the gates of each of the FETs being connected to the respective drain of the other FET at least one FET having a double layered gate insulation film under the gate electrode, thereby forming a non-volatile memory element. The negative resistance device acquires or loses negative resistance characteristics by responding to signals to the gates, thereby memorizing the signals and resulting in a highly efficient memory which requires little power in writing-in, erasing and memory-holding.