The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 1977
Filed:
Apr. 02, 1976
Shih-Ming Hu, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An integrated circuit structure and method for manufacturing same which provides for gettering with a backside layer of polycrystalline silicon. The gettering of unwanted impurities from the integrated circuits involves the deposition of a polycrystalline silicon film on a semiconductor wafer prior to any or some high temperature processing steps. The semiconductor body is then subjected to the normal semiconductor processing steps to form semiconductor devices on the surface opposite to the surface having the polycrystalline silicon layer. During these high temperature processing steps, unwanted impurities such as copper, iron, nickel, sodium and potassium ions move toward and into the polycrystalline silicon layer and thereby away from the semiconductor devices. This produces improved yield in the integrated circuit process.