The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 1977
Filed:
Apr. 04, 1975
Applicant:
Inventors:
Harry Francis Lockwood, New York, NY (US);
Michael Ettenberg, Freehold, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B01J / ; H01L / ;
U.S. Cl.
CPC ...
156622 ; 2957 / ; 148171 ; 148172 ; 156624 ; 252 / ; 427 87 ;
Abstract
A thin layer of semiconductor material with an extremely smooth surface can be grown on a substrate by liquid phase epitaxy. When the growing solution contacts the surface of the substrate, the substrate is at a lower temperature than the solution. The temperature difference should be less than 1.degree. C and depends upon the desired degree of smoothness. Both the substrate and the solution are then cooled to permit deposition of the layer.