The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 1977
Filed:
May. 25, 1976
Noboru Horie, Kodaira, JA;
Hitachi, Ltd., , JA;
Abstract
A semiconductor device comprising at least a pair of NPN and PNP transistors is improved. This semiconductor device is characterized in that at least one pair of vertical transistors are formed in a semiconductor layer of the second conductivity type formed on a semiconductor substrate of the first conductivity type, the semiconductor layer of the second conductivity type serving as both the collector of one of the transistors and the base of the other and that the transistors are electrically insulated from each other by organic insulator formed on the inorganic insulating film on the semiconductor substrate. Thus, a semiconductor device can be obtained in which PNP transistors having good characteristics such as current amplification factor h.sub.FE and gain-bandwidth product f.sub.T are incorporated in an integrated circuit consisting mainly of NPN transistors.