The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 1977
Filed:
Dec. 09, 1976
Applicant:
Inventors:
Wojciech Rosnowski, Summit, NJ (US);
Samuel Ponczak, Somerville, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148189 ; 148187 ; 148188 ;
Abstract
A silicon substrate is coated with a mask comprised of the combination of a silicon dioxide layer and a layer of undoped polycrystalline silicon. Aluminum is then diffused through windows formed in the mask. The mask has proven effective for relatively deep aluminum diffusion.
Rosnowski, Wojciech. (1977). Method of selective aluminum diffusion (U.S. Patent No. 4050967). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4050967
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile