The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 1977
Filed:
Jun. 09, 1976
Yasukazu Inoue, Tokyo, JA;
Shoji Fujimoto, Tokyo, JA;
Nippon Electric Co., Ltd., Tokyo, JA;
Abstract
A silicon layer is deposited over the insulating layer covering the surface of the semiconductor substrate and apertured to define a contact window through which the silicon layer is connected with a one-conductivity-type region formed in the semiconductor substrate. An impurity of the one conductivity type is introduced into the one-conductivity-type region through the contact window from the silicon layer. This impurity may be supplied from the surface of the silicon layer or may be preliminarily doped in the silicon layer. A conductive layer is deposited over the silicon layer and is formed to a predetermined pattern. Thereafter, the silicon layer is formed to the same pattern.