The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 1977
Filed:
Feb. 12, 1976
Matsushita Electronics Corporation, Osaka, JA;
Abstract
A semiconductor optical image sensing device having a signal line connected to the drain electrodes of MOS field effect transistors each corresponding to a picture element, wherein the source electrodes of the MOS field effect transistors are connected to photo-diodes, capacitors of MOS structures are connected between the gate electrodes of the MOS field effect transistors and a noise line, and the signal line and the noise line are connected to input terminals of a differential amplifier. The capacitors of MOS structures are formed in the same way as the gates and drains of the MOS field effect transistors. By applying a scanning pulse to the gate electrodes of the MOS field effect transistors to scan the MOS field effect transistors for switching the same, a signal output and a noise output are produced from the signal line while another noise output is produced from the noise line. The signal to noise ratio can be enhanced by producing only the signal output from the differential amplifier.