The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 1977
Filed:
Jul. 30, 1976
Walter J Butler, Scotia, NY (US);
Mark B Barron, Camillus, NY (US);
Bruno F Kurz, deceased, late of Niskayuna, NY (US);
by Elizabeth Kurz-Beerli, executrix, also known as Elisabeth H Kurz, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
An MOS bucket brigade delay line having reduced parasitic capacitances include a first set of diffused drain source regions in a semiconductor substrate, a thin gate oxide layer overlying said diffused regions, a plurality of gate electrodes having first and second edges, the first edge of each electrode substantially overlapping one of said diffused regions, each of these elements formed in conventional manner. A second set of diffused drain-source regions extends the first set of regions by an amount limited by the second edge of the gate electrodes. The second set of drain source regions is formed by utilizing the gate electrodes as a diffusion mask.