The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 1977
Filed:
Feb. 02, 1976
Applicant:
Inventors:
Juergen Graul, Gruenwald, DT;
Helmuth Murrmann, Ottobrunn, DT;
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DT;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ;
Abstract
A process for producing an inversely operated transistor in a body of semiconductor material which has arranged on its surface collector, base and emitter zones and wherein the base is doped by ion implantation so that minority charge carriers injected from the emitter zone into the base zone are accelerated in the direction towards the collector zone due to an inner drift field in the base zone.