The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1977
Filed:
Mar. 15, 1976
Burkhard Littwin, Hohenschaeftlarn, DT;
Siemens Aktiengesellschaft, Berlin & Munich, DT;
Abstract
A method of manufacturing microscopically small metal structures which are used in a memory which has cylindrical magnetic domains or magnetic bubbles characterized by creating patterns or channels in a first photo-resist layer disposed on an Ni-Fe layer which was vapor deposited on a storage layer to expose portions of the Ni-Fe layer corresponding to a pattern for guide loop generators, domain annihilators, control lines and/or read lines, electroplating a first gold layer on the Ni-Fe layer, electroplating a Ni-P layer on the first gold layer, and then placing a second and third gold layer successively on top of the Ni-P layer, removing the first photo-resist layer, applying a second photo-resist layer and forming channels or patterns therein to expose portions of the Ni-Fe layer which patterns or channels correspond to the manipulative patterns or domain extenders, electroplating a fourth gold layer in the exposed portions of the Ni-Fe layer, depositing a thick Ni-Fe layer on the fourth gold layer and then removing the second photo-resist layer, applying a third photo-resist layer, exposing and developing the third photo-resist layer to leave the photo-resist layer on the portions to form the detector strips and portions overlapping read line, removing the Ni-Fe layers which have been vapor deposited on the storage layer by etching the zones which are free of the photo-resist and subsequently removing the third photo-resist layer.